5秒后页面跳转
IXFA6N120P PDF预览

IXFA6N120P

更新时间: 2024-11-21 11:57:11
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 169K
描述
Polar HiPerFET Power MOSFET

IXFA6N120P 数据手册

 浏览型号IXFA6N120P的Datasheet PDF文件第2页浏览型号IXFA6N120P的Datasheet PDF文件第3页浏览型号IXFA6N120P的Datasheet PDF文件第4页 
Advance Technical Information  
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 6A  
RDS(on) 2.4Ω  
IXFA6N120P  
IXFP6N120P  
IXFH6N120P  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrinsic Diode  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXFP)  
TJ = 25°C to 150°C  
1200  
1200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
6
A
A
TO-247 (IXFH)  
18  
IA  
TC = 25°C  
TC = 25°C  
3
A
EAS  
300  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
G
D
S
250  
D (Tab)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Dynamic dv/dt Rating  
z Avalanche Rated  
z Fast Intrinsic Diode  
z Low QG  
z Low RDS(on)  
z Low Drain-to-Tab Capacitance  
z Low Package Inductance  
TSOLD  
Md  
Mounting Torque (TO-220 &TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
5.0  
Applications  
±100 nA  
z DC-DC Converters  
z Battery Chargers  
IDSS  
10 µA  
1 mA  
TJ = 125°C  
z Switch-Mode and Resonant-Mode  
Power Supplies  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
2.4  
z Uninterrupted Power Supplies  
z AC Motor Drives  
z High Speed Power Switching  
Applications  
DS100202A(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

IXFA6N120P 替代型号

型号 品牌 替代类型 描述 数据表
IXFH6N120P IXYS

功能相似

Polar HiPerFET Power MOSFET
IXFP6N120P IXYS

功能相似

Polar HiPerFET Power MOSFET

与IXFA6N120P相关器件

型号 品牌 获取价格 描述 数据表
IXFA72N20X3 LITTELFUSE

获取价格

超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘
IXFA72N30X3 IXYS

获取价格

Power Field-Effect Transistor,
IXFA72N30X3 LITTELFUSE

获取价格

超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘
IXFA76N15T2 IXYS

获取价格

TrenchT2 HiperFET Power MOSFET
IXFA76N15T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXFA7N100P IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFA7N100P LITTELFUSE

获取价格

Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Meta
IXFA7N100P-TRL LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFA7N60P3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFA7N60P3 IXYS

获取价格

Power Field-Effect Transistor, 7A I(D), 600V, 1.15ohm, 1-Element, N-Channel, Silicon, Meta