Datasheet > IXFA72N30X3

IXFA72N30X3

更新时间： 2024-11-05 14:42:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	245K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFA72N30X3 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	8.3
Is Samacsys：	N	Base Number Matches：	1

IXFA72N30X3 数据手册

Advance Technical Information

X3-Class HiPerFET^TM

Power MOSFET

V_DSS= 300V

I_D25= 72A

R_DS(on) 19m

IXFA72N30X3

IXFP72N30X3

IXFQ72N30X3

IXFH72N30X3

TO-263 AA (IXFA)

N-Channel Enhancement Mode

D (Tab)

TO-220AB (IXFP)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

300

D (Tab)

V_DGR

T_J= 25C to 150C, R_GS= 1M

TO-3P (IXFQ)

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

150

D (Tab)

I_A

T_C= 25C

TO-247 (IXFH)

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

390

T_J

-55 ... +150

150

C

D (Tab)

T_JM

T_stg

G = Gate

S = Source

= Drain

-55 ... +150

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220,TO-247 & TO-3P)

10..65 / 2.2..14.6

N/lb

Nm/lb.in



International Standard Packages

Low R_DS(ON)and Q_G

Avalanche Rated

Fast Intrinsic Diode

Low Package Inductance

1.13 / 10



Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

6.0

TO-247

Advantages



High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 1.5mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

300

Applications

2.5

4.5



Switch-Mode and Resonant-Mode

100 nA

A

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives



I_DSS



T_J= 125C

750 A



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

19 m

Robotics and Servo Controls

DS100853A(7/17)

12 3 4 5 6

中文翻译

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