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IXFA4N100Q PDF预览

IXFA4N100Q

更新时间: 2024-11-05 03:16:47
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IXYS /
页数 文件大小 规格书
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描述
HiPerFET Power MOSFETs Q-Class

IXFA4N100Q 数据手册

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HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFA 4N100Q VDSS  
IXFP 4N100Q ID25  
=1000 V  
4 A  
=
RDS(on) = 3.0 W  
trr £ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, High dv/dt  
Preliminary Data Sheet  
Symbol  
TestConditions  
MaximumRatings  
TO-220 (IXFP)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGS = 1 MW  
D (TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
4
16  
4
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-263 (IXFA)  
EAR  
EAS  
TC = 25°C  
20  
mJ  
mJ  
G
S
700  
D (TAB)  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
G = Gate  
D
= Drain  
PD  
TC = 25°C  
150  
W
S = Source  
TAB = Drain  
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 to +150  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mountingtorque(TO-220)  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Features  
Weight  
TO-220  
TO-263  
4
2
g
g
• IXYS advanced low Qg process  
• Low gate charge and capacitances  
- easier to drive  
- faster switching  
• Internationalstandardpackages  
• Low RDS (on)  
• Rated for unclamped Inductive load  
Switching (UIS)  
• Molding epoxies meet UL94V-0  
flammabilityclassification  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 1.5 mA  
1000  
3.0  
V
V
VGS(th)  
5.0  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
50  
1
mA  
mA  
Advantages  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
3.0  
W
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98705(02/04/00)  
1 - 4  

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