HiperFETTM
Power MOSFETs
Q-Class
VDSS = 1000V
ID25 = 4A
RDS(on) ≤ 3.0Ω
IXFA4N100Q
IXFP4N100Q
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrinsic Diode
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
TO-220AB (IXFP)
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
IDM
TC = 25°C
4
16
A
A
TC = 25°C, Pulse Width Limited by TJM
G
D
D (Tab)
= Drain
IA
EAS
TC = 25°C
TC = 25°C
4
700
A
mJ
S
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
5
V/ns
W
G = Gate
S = Source
D
Tab = Drain
150
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
z International Standard Packages
z Avalanche Rated
MC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65/2.2..14.6
1.13/10
Nm/lb.in.
Nm/lb.in.
z Fast Intrinsic Diode
z Low QG
z Low RDS(on)
z Low Drain-to-Tab Capacitance
z Low Package Inductance
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
2.5
Typ.
Max.
z
High Power Density
Easy to Mount
Space Savings
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
V
V
z
VDS = VGS, ID = 1.5mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS = 0V
4.5
± 100 nA
Applications
IDSS
50 μA
1 mA
z
TJ = 125°C
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
z
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
3.0
Ω
z
Power Supplies
DC Choppers
Temperature and Lighting Controls
z
z
DS98705B(04/11)
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