Datasheet > IXFA4N100Q-TRL

IXFA4N100Q-TRL

更新时间： 2024-11-05 22:58:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	193K
描述
MOSFET N-CH 1000V 4A TO-263

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中文翻译

获取价格

数据手册
替代型号

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IXFA4N100Q-TRL 数据手册

HiperFET^TM

Power MOSFETs

Q-Class

V_DSS= 1000V

I_D25= 4A

R_DS(on)≤ 3.0Ω

IXFA4N100Q

IXFP4N100Q

N-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXFA)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

D (Tab)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

TO-220AB (IXFP)

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

D (Tab)

= Drain

I_A

E_AS

T_C= 25°C

700

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

G = Gate

S = Source

Tab = Drain

150

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^zInternational Standard Packages

^zAvalanche Rated

M_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220)

10..65/2.2..14.6

1.13/10

Nm/lb.in.

^zFast Intrinsic Diode

^zLow Q_G

^zLow R_DS(on)

^zLow Drain-to-Tab Capacitance

^zLow Package Inductance

Weight

TO-263

TO-220

2.5

3.0

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

2.5

Typ.

Max.

High Power Density

Easy to Mount

Space Savings

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1.5mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.5

± 100 nA

Applications

I_DSS

50 μA

1 mA

T_J= 125°C

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

3.0

Power Supplies

DC Choppers

Temperature and Lighting Controls

DS98705B(04/11)

12 3 4 5

中文翻译

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IXFA4N100Q-TRL 替代型号

型号	品牌	替代类型	描述	数据表
IXFA4N100Q	IXYS	类似代替	HiPerFET Power MOSFETs Q-Class

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