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IXFA4N100Q-TRL PDF预览

IXFA4N100Q-TRL

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 193K
描述
MOSFET N-CH 1000V 4A TO-263

IXFA4N100Q-TRL 数据手册

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HiperFETTM  
Power MOSFETs  
Q-Class  
VDSS = 1000V  
ID25 = 4A  
RDS(on) 3.0Ω  
IXFA4N100Q  
IXFP4N100Q  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrinsic Diode  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
D (Tab)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
TO-220AB (IXFP)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
4
16  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
D
D (Tab)  
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
4
700  
A
mJ  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
5
V/ns  
W
G = Gate  
S = Source  
D
Tab = Drain  
150  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
MC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65/2.2..14.6  
1.13/10  
Nm/lb.in.  
Nm/lb.in.  
z Fast Intrinsic Diode  
z Low QG  
z Low RDS(on)  
z Low Drain-to-Tab Capacitance  
z Low Package Inductance  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
2.5  
Typ.  
Max.  
z
High Power Density  
Easy to Mount  
Space Savings  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
z
VDS = VGS, ID = 1.5mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
4.5  
± 100 nA  
Applications  
IDSS  
50 μA  
1 mA  
z
TJ = 125°C  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
3.0  
Ω
z
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
z
z
DS98705B(04/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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