Datasheet > IXFA4N60P3

IXFA4N60P3

更新时间： 2024-11-05 20:05:43

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	322K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFA4N60P3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXFA4N60P3 数据手册

Polar3 ^TMHiPerFET^TM

Power MOSFET

V_DSS= 600V

I_D25= 4A

R_DS(on) 2.4

IXFY4N60P3

IXFA4N60P3

IXFP4N60P3

N-Channel Enhancement Mode

Avalanche Rated

TO-252 (IXFY)

Fast Intrinsic Rectifier

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-263 (IXFA)

T_J= 25C to 150C

600

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

D (Tab)

I_D25

I_DM

T_C= 25C

TO-220 (IXFP)

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

E_AS

200

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

D (Tab)

114

G = Gate

S = Source

= Drain

T_J

-55 ... +150

150

C

Tab = Drain

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features



M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

International Standard Packages

Fast Intrinsic Rectifier

Avalanche Rated

Low R_DS(ON)and Q_G

Low Package Inductance



Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

Advantages



High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

600

Applications

3.0

5.0



Switch-Mode and Resonant-Mode

100 nA

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives



I_DSS

10 A

100 μA



T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

2.4



Robotics and Servo Controls

DS100427C(6/18)

12 3 4 5 6 7

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