Datasheet > IXFA5N50P3

IXFA5N50P3

更新时间： 2024-01-17 00:40:57

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	167K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
数据手册

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IXFA5N50P3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXFA5N50P3 数据手册

Preliminary Technical Information

Polar3 ^TMHiPerFET^TM

Power MOSFETs

V_DSS= 500V

I_D25= 5A

R_DS(on) 1.65

IXFY5N50P3

IXFA5N50P3

IXFP5N50P3

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

TO-252 (IXFY)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-263 AA (IXFA)

T_J= 25C to 150C

500

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

D (Tab)

T_C= 25C, Pulse Width Limited by T_JM

TO-220AB (IXFP)

I_A

T_C= 25C

2.5

E_AS

100

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

114

D (Tab)

T_J

-55 ... +150

150

C

G = Gate

= Drain

T_JM

T_stg

S = Source

Tab = Drain

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in



International Standard Packages

Fast Intrinsic Rectifier

Avalanche Rated

Low R_DS(ON)and Q_G

Low Package Inductance



Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

Advantages



Symbol

Test Conditions

Characteristic Values

High Power Density

Easy to Mount

Space Savings



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

500

3.0

5.0

Applications

100 nA

A



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS



T_J= 125C

50 μA



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

1.65





DS100454A(11/13)

12 3 4 5

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