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IXFA5N50P3

更新时间: 2024-11-05 19:45:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 167K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IXFA5N50P3 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.76配置:Single
最大漏极电流 (Abs) (ID):5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:2
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):114 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

IXFA5N50P3 数据手册

 浏览型号IXFA5N50P3的Datasheet PDF文件第2页浏览型号IXFA5N50P3的Datasheet PDF文件第3页浏览型号IXFA5N50P3的Datasheet PDF文件第4页浏览型号IXFA5N50P3的Datasheet PDF文件第5页 
Preliminary Technical Information  
Polar3 TM HiPerFETTM  
Power MOSFETs  
VDSS = 500V  
ID25 = 5A  
RDS(on) 1.65  
IXFY5N50P3  
IXFA5N50P3  
IXFP5N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-252 (IXFY)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-263 AA (IXFA)  
TJ = 25C to 150C  
500  
500  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
5
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
12  
TO-220AB (IXFP)  
IA  
TC = 25C  
TC = 25C  
2.5  
A
EAS  
100  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
G
114  
D
D (Tab)  
S
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
D
= Drain  
TJM  
Tstg  
S = Source  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
International Standard Packages  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
500  
V
V
3.0  
5.0  
Applications  
100 nA  
A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
5
TJ = 125C  
50 μA  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
1.65  
DS100454A(11/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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