5秒后页面跳转
IXFA60N25X3 PDF预览

IXFA60N25X3

更新时间: 2023-12-06 20:13:17
品牌 Logo 应用领域
力特 - LITTELFUSE 开关栅极
页数 文件大小 规格书
7页 313K
描述
超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘以栅极电荷),最大限度地降低传导和开关损耗。 该系列产品表现出业内最低的导通电阻。 凭借较低的反向恢复电荷

IXFA60N25X3 数据手册

 浏览型号IXFA60N25X3的Datasheet PDF文件第2页浏览型号IXFA60N25X3的Datasheet PDF文件第3页浏览型号IXFA60N25X3的Datasheet PDF文件第4页浏览型号IXFA60N25X3的Datasheet PDF文件第5页浏览型号IXFA60N25X3的Datasheet PDF文件第6页浏览型号IXFA60N25X3的Datasheet PDF文件第7页 
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 250V  
ID25 = 60A  
RDS(on) 23m  
IXFA60N25X3  
IXFP60N25X3  
IXFQ60N25X3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-263  
(IXFA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
(IXFP)  
TJ = 25C to 150C  
250  
250  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
60  
A
A
D (Tab)  
210  
TO-3P  
(IXFQ)  
IA  
TC = 25C  
TC = 25C  
30  
A
EAS  
700  
mJ  
G
D
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
D (Tab)  
320  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source Tab = Drain  
D
= Drain  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-3P)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
V
V
2.5  
4.5  
Applications  
100 nA  
A  
IDSS  
5
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
19  
23 m  
Robotics and Servo Controls  
DS100807D(8/19)  
© 2019 IXYS CORPORATION, All Rights Reserved  

与IXFA60N25X3相关器件

型号 品牌 获取价格 描述 数据表
IXFA6N120P IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFA6N120P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFA72N20X3 LITTELFUSE

获取价格

超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘
IXFA72N30X3 IXYS

获取价格

Power Field-Effect Transistor,
IXFA72N30X3 LITTELFUSE

获取价格

超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘
IXFA76N15T2 IXYS

获取价格

TrenchT2 HiperFET Power MOSFET
IXFA76N15T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXFA7N100P IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFA7N100P LITTELFUSE

获取价格

Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Meta
IXFA7N100P-TRL LITTELFUSE

获取价格

Power Field-Effect Transistor,