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IRLR8729TRPBF PDF预览

IRLR8729TRPBF

更新时间: 2024-11-21 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 356K
描述
HEXFET Power MOSFET

IRLR8729TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, DPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.06雪崩能效等级(Eas):74 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):58 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0089 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):55 W最大脉冲漏极电流 (IDM):260 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLR8729TRPBF 数据手册

 浏览型号IRLR8729TRPBF的Datasheet PDF文件第2页浏览型号IRLR8729TRPBF的Datasheet PDF文件第3页浏览型号IRLR8729TRPBF的Datasheet PDF文件第4页浏览型号IRLR8729TRPBF的Datasheet PDF文件第5页浏览型号IRLR8729TRPBF的Datasheet PDF文件第6页浏览型号IRLR8729TRPBF的Datasheet PDF文件第7页 
PD - 97352A  
IRLR8729PbF  
IRLU8729PbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS RDS(on) max  
Qg  
10nC  
8.9m  
30V  
D
Benefits  
S
S
D
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
G
G
D-Pak  
IRLR8729PbF  
I-Pak  
IRLU8729PbF  
l Lead-Free  
l RoHS compliant  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
± 20  
58  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
41  
A
260  
55  
DM  
Maximum Power Dissipation  
Maximum Power Dissipation  
P
P
@TC = 25°C  
W
D
D
@TC = 100°C  
27  
Linear Derating Factor  
Operating Junction and  
0.37  
-55 to + 175  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
2.73  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB Mount)  
°C/W  
Junction-to-Ambient  
110  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through are on page 11  
www.irf.com  
1
12/16/08  

IRLR8729TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRLR8729TRLPBF INFINEON

完全替代

High Frequency Synchronous Buck Converters for Computer Processor Power
IPD090N03LGATMA1 INFINEON

类似代替

Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Me
IRLR8729PBF INFINEON

类似代替

HEXFET Power MOSFET

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