Datasheet > IRLRU120N

IRLRU120N

更新时间： 2024-11-24 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	175K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

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IRLRU120N 数据手册

PD - 91541B

IRLR/U120N

HEXFET^®Power MOSFET

Surface Mount (IRLR120N)

Straight Lead (IRLU120N)

Advanced Process Technology

Fast Switching

V_DSS= 100V

R_DS(on)= 0.185Ω

Fully Avalanche Rated

I_D= 10A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D -PAK

TO -252AA

I-PAK

TO -251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.0

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.32

± 16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

6.0

4.8

5.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.1

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

R_θJA

110

www.irf.com

5/11/98

12 3 4 5 6 7...10

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