Datasheet > IRLS3034

IRLS3034

更新时间： 2024-09-16 01:17:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	331K
描述
Uninterruptible Power Supply

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLS3034 数据手册

PD - 97362

IRLS3034-7PPbF

HEXFET^®Power MOSFET

Applications

l DC Motor Drive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

40V

1.0m

1.4m

380A

Ω

max.

I_D

(Silicon Limited)

Benefits

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

240A

(Package Limited)

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

380c

270c

240

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

1540

P_D@T_C= 25°C

380

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

1.3

Peak Diode Recovery f

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

250

Avalanche Currentꢀd

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy d

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case kl

Junction-to-Ambient j

Typ.

–––

Max.

0.40

Units

°C/W

R_θJC

R_θJA

–––

www.irf.com

1/12/09

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRLS3034相关器件

型号	品牌	获取价格	描述	数据表
IRLS3034-7P	INFINEON	获取价格	40V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pa
IRLS3034-7PPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLS3034-7PPBF_15	INFINEON	获取价格	Uninterruptible Power Supply
IRLS3034PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLS3034PBF_15	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRLS3034TRL7PP	INFINEON	获取价格	Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, M
IRLS3034TRLPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLS3034TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, M
IRLS3036	INFINEON	获取价格	60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装
IRLS3036-7P	INFINEON	获取价格	Power Field-Effect Transistor, 240A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, M