Datasheet > IRLS3036TRL-7P

IRLS3036TRL-7P

更新时间： 2024-11-26 09:09:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	307K
描述
Power Field-Effect Transistor, 240A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, PLASTIC, D2PAK-7

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数据手册

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IRLS3036TRL-7P 数据手册

PD -97148A

IRLS3036-7PPbF

HEXFET^®Power MOSFET

Applications

l DC Motor Drive

V_DSS

60V

R_DS(on)typ.

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

1.5m

1.9m

300A

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

240A

Benefits

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

300c

210

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current d

240

1000

380

P_D@T_C= 25°C

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 16

8.1

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

Operating Junction and

-55 to + 175

300

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

300

Avalanche Current d

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy d

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_θJC

Junction-to-Case kl

R_θJA

Junction-to-Ambient (PCB Mount, steady state) j

–––

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10/28/10

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