Datasheet > IRLS4030-7P

IRLS4030-7P

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	296K
描述
100V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pak 封装

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLS4030-7P 数据手册

PD -97371

IRLS4030-7PPbF

HEXFET^®Power MOSFET

Applications

l DC Motor Drive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

100V

R_DS(on)typ.

3.2m

3.9m

Ω

max.

I_D

190A

Benefits

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

190

130

750

370

2.5

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 16

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

320

Avalanche Current c

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy f

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_θJC

Junction-to-Case jk

R_θJA

–––

Junction-to-Ambient (PCB Mount) ij

www.irf.com

02/12/09

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRLS4030-7P相关器件

型号	品牌	获取价格	描述	数据表
IRLS4030-7PPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLS4030PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLS4030TRL7PP	INFINEON	获取价格	Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon,
IRLS4030TRLPBF	INFINEON	获取价格	DC Motor Drive
IRLS510	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.6A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRLS510A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLS511	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.6A I(D), 80V, 0.75ohm, 1-Element, N-Channel, Silicon, Met
IRLS520A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLS521	SAMSUNG	获取价格	Power Field-Effect Transistor, 5.8A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta
IRLS530	FAIRCHILD	获取价格	Advanced Power MOSFET