5秒后页面跳转
IRLR-U2905PBF PDF预览

IRLR-U2905PBF

更新时间: 2024-11-21 12:04:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 319K
描述
Advanced Process Technology

IRLR-U2905PBF 数据手册

 浏览型号IRLR-U2905PBF的Datasheet PDF文件第2页浏览型号IRLR-U2905PBF的Datasheet PDF文件第3页浏览型号IRLR-U2905PBF的Datasheet PDF文件第4页浏览型号IRLR-U2905PBF的Datasheet PDF文件第5页浏览型号IRLR-U2905PBF的Datasheet PDF文件第6页浏览型号IRLR-U2905PBF的Datasheet PDF文件第7页 
PD- 95084A  
IRLR/U2905PbF  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Ultra Low On-Resistance  
l Surface Mount (IRLR2905)  
l Straight Lead (IRLU2905)  
l Advanced Process Technology  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 0.027Ω  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 42A  
S
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve the lowest possible on-resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs are well known for,  
provides the designer with an extremely efficient device for use in a wide  
variety of applications.  
D-Pak  
TO-252AA  
I-Pak  
TO-251AA  
The D-PAK is designed for surface mounting using vapor phase, infrared, or  
wave soldering techniques. The straight lead version (IRFU series) is for  
through-hole mounting applications. Power dissipation levels up to 1.5 watts  
are possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
42 ꢀ  
30  
160  
110  
0.71  
± 16  
210  
25  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
PD @TC = 25°C  
PowerDissipation  
W
W/°C  
V
LinearDeratingFactor  
VGS  
EAS  
IAR  
Gate-to-SourceVoltage  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
mJ  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
OperatingJunctionand  
11  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
StorageTemperatureRange  
SolderingTemperature, for10seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.4  
Units  
RθJC  
RθJA  
RθJA  
Case-to-Ambient(PCBmount)**  
Junction-to-Ambient  
–––  
50  
°C/W  
–––  
110  
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
www.irf.com  
1
12/7/04  

与IRLR-U2905PBF相关器件

型号 品牌 获取价格 描述 数据表
IRLRU3103PBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRLRU3410 INFINEON

获取价格

Logic Level Gate Drive / Fully Avalanche Rated
IRLS0Z0 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.6A I(D) | TO-243
IRLS0Z0TRL INFINEON

获取价格

Power Field-Effect Transistor, 2.6A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRLS0Z0TRR INFINEON

获取价格

Power Field-Effect Transistor, 2.6A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRLS3034 INFINEON

获取价格

Uninterruptible Power Supply
IRLS3034-7P INFINEON

获取价格

40V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pa
IRLS3034-7PPBF INFINEON

获取价格

HEXFET Power MOSFET
IRLS3034-7PPBF_15 INFINEON

获取价格

Uninterruptible Power Supply
IRLS3034PBF INFINEON

获取价格

HEXFET Power MOSFET