Datasheet > IRLR9343TRL

IRLR9343TRL

更新时间： 2024-11-25 20:39:03

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器脉冲晶体管
页数	文件大小	规格书
10页	240K
描述
Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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IRLR9343TRL 数据手册

PD - 95850

DIGITAL AUDIO MOSFET

IRLR9343

IRLU9343

IRLU9343-701

Features

l Advanced Process Technology

Key Parameters

l Key Parameters Optimized for Class-D Audio

Amplifier Applications

l Low R_DSONfor Improved Efficiency

l Low Q_gand Q_swfor Better THD and Improved

Efficiency

l Low Q_rrfor Better THD and Lower EMI

l 175°C Operating Junction Temperature for

Ruggedness

V_DS

R_DS(ON)typ. @ V_GS= -10V

_DS(ON)typ. @ V_GS= -4.5V

-55

°C

150

Q_gtyp.

T_Jmax

175

l Repetitive Avalanche Capability for Robustness and

Reliability

l Multiple Package Options

D-Pak

IRLR9343

I-Pak

IRLU9343

I-Pak Leadform 701

IRLU9343-701

Refer to page 10 for package outline

Description

This Digital Audio HEXFET^®is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

-55

±20

-20

-14

-60

Units

V_DS

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

P_D@T_C= 25°C

P_D@T_C= 100°C

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Clamping Pressure h

0.53

W/°C

°C

T_J

-40 to + 175

T_STG

–––

Thermal Resistance

Parameter

Typ.

–––

Max.

1.9

Units

Junction-to-Case g

R_θJC

R_θJA

Junction-to-Ambient (PCB Mounted) gj

Junction-to-Ambient (free air) g

°C/W

110

Notes through are on page 10

www.irf.com

4/1/04

12 3 4 5 6 7...10

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与IRLR9343TRL相关器件

型号	品牌	获取价格	描述	数据表
IRLR9343TRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRPBF	INFINEON	获取价格	key parameters optimlzed for class-d audio amplifier applications
IRLR9343TRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLRU110A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLRU120A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRLRU120N	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)
IRLRU130A	FAIRCHILD	获取价格	Advanced Power MOSFET

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