PD - 95850
DIGITAL AUDIO MOSFET
IRLR9343
IRLU9343
IRLU9343-701
Features
l Advanced Process Technology
Key Parameters
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
VDS
RDS(ON) typ. @ VGS = -10V
DS(ON) typ. @ VGS = -4.5V
-55
V
m:
m:
nC
°C
93
R
150
31
Qg typ.
TJ max
175
l Repetitive Avalanche Capability for Robustness and
Reliability
D
l Multiple Package Options
D-Pak
IRLR9343
I-Pak
IRLU9343
G
I-Pak Leadform 701
IRLU9343-701
S
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
-55
±20
-20
-14
-60
79
Units
V
VDS
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
A
PD @TC = 25°C
PD @TC = 100°C
Power Dissipation
Power Dissipation
W
39
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure h
0.53
W/°C
°C
TJ
-40 to + 175
TSTG
–––
N
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.9
Units
Junction-to-Case g
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB Mounted) gj
Junction-to-Ambient (free air) g
50
°C/W
110
Notes through are on page 10
www.irf.com
1
4/1/04