Datasheet > IRLR8743_19

IRLR8743_19

更新时间： 2022-02-26 12:46:33

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	248K
描述
Isc N-Channel MOSFET Transistor

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IRLR8743_19 数据手册

Isc N-Channel MOSFET Transistor

IRLR8743

·FEATURES

·With To-252(DPAK) package

·Low input capacitance and gate charge

·Low gate input resistance

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·APPLICATIONS

·Switching applications

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GSS

I_D

PARAMETER

VALUE

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-ContinuousTc=25℃

Tc=100℃

160

113

I_DM

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

640

135

P_D

℃

T_ch

175

-55~175

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Rth(ch-c) Channel-to-case thermal resistance

Rth(ch-a) Channel-to-ambient thermal resistance

1.11

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isc & iscsemi is registered trademark

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