Datasheet > IRLR9343TR

IRLR9343TR

更新时间： 2024-10-15 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	474K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-3.4A;Vgs(th)(V):±20;漏源导通电阻:97mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLR9343TR 数据手册

UMW

IRLR9343

-60V P-Channel MOSFET

Description

l Advanced Process Technology

l Key Parameters Optimized for Class-D Audio

Amplifier Applications

l Low R_DSONfor Improved Efficiency

l Low Q_gand Q_swfor Better THD and Improved

Efficiency

l Low Q_rrfor Better THD and Lower EMI

l 175°C Operating Junction Temperature for

Ruggedness

l Repetitive Avalanche Capability for Robustness and

Reliability

l Multiple Package Options

Features

V_DS

(V) = -60V

R_DS(ON)

Ω

(V_GS= -10V)

R_DS(ON)

< 130mΩ (V_GS= -4.5V)

Absolute Maximum Ratings

Max.

-60

±20

-20

-14

-60

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Units

V_DS

V_GS

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

P_D@T_C= 100°C

Power Dissipation

0.53

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Clamping Pressure

W/°C

°C

T_J

-40 to + 175

T_STG

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

R_θJC

1.9

Junction-to-Ambient (PCB Mounted)

Junction-to-Ambient (free air)

R_θ

°C/W

R_θJA

110

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

中文翻译

下载PDF

与IRLR9343TR相关器件

型号	品牌	获取价格	描述	数据表
IRLR9343TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRPBF	INFINEON	获取价格	key parameters optimlzed for class-d audio amplifier applications
IRLR9343TRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLR9343TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Met
IRLRU110A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLRU120A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRLRU120N	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)