Datasheet > IRLR8729TRPBF-1

IRLR8729TRPBF-1

更新时间： 2024-10-30 14:42:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	232K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IRLR8729TRPBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.67	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IRLR8729TRPBF-1 数据手册

IRLR8729PbF-1

HEXFET^®Power MOSFET

V_DS

8.9

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

D-Pak

IRLR8729PbF-1

(@T_C= 25°C)

Features

Benefits

Industry-standard pinout D-Pak and I-Pak

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tape and Reel

Tape and Reel Left

2000

3000

IRLR8729TRPbF-1

IRLR8729TRLPbF-1

D-Pak

IRLR8729PbF-1

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

260

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.37

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.73

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mount)

°C/W

Junction-to-Ambient

110

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June 29, 2014

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