Datasheet > IRLR8729PBF_09

IRLR8729PBF_09

更新时间： 2024-10-30 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	348K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册

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IRLR8729PBF_09 数据手册

PD - 97352B

IRLR8729PbF

IRLU8729PbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

V_DSSR_DS(on)max

10nC

8.9m

Ω

30V

Benefits

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR8729PbF

I-Pak

IRLU8729PbF

l Lead-Free

l RoHS compliant

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

260

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.37

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.73

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mount)

°C/W

Junction-to-Ambient

110

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through ꢀ are on page 11

www.irf.com

11/23/09

12 3 4 5 6 7...11

中文翻译

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