Datasheet > IRLR3103TRL

IRLR3103TRL

更新时间： 2024-11-05 19:53:27

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	213K
描述
Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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IRLR3103TRL 数据手册

PD - 91333E

IRLR/U3103

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR3103)

l Straight Lead (IRLU3103)

l Advanced Process Technology

l Fast Switching

V_DSS= 30V

R_DS(on)= 0.019Ω

I_D= 55Aꢀ

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

D -PAK

I-PAK

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

TO -252AA

TO -251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

55ꢀ

39ꢀ

220

107

0.71

± 16

240

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

R_θJA

110

www.irf.com

11/11/98

12 3 4 5 6 7...10

中文翻译

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IRLR3103TRL 替代型号

型号	品牌	替代类型	描述	数据表
IRLR3103TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met

与IRLR3103TRL相关器件

型号	品牌	获取价格	描述	数据表
IRLR3103TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3105	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRLR3105PBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRLR3105TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Met
IRLR3105TRPBF	INFINEON	获取价格	Logic-Level Gate Drive
IRLR3105TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Met
IRLR3110Z	INFINEON	获取价格	100V HEXFET Power MOSFET, 采用 D-Pak 封装
IRLR3110ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET

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