Datasheet > IRLR3410

IRLR3410

更新时间： 2024-10-15 18:10:07

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科信 - KEXIN		/
页数	文件大小	规格书
7页	210K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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IRLR3410 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

IRLR3410

TO-252

Unit: mm

Ƶ Features

ƽ VDS = 100V; I_D= 17A

ƽ RDS(ON) İ 0.105¡ (VGS = 10V)

ƽ Logic Level Gate Drive

ƽ Ultra Low On-Resistance

ƽ Advanced Process Technology

ƽ Fast Switching

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

-0.2

5.30

0.50

0.127

max

+0.1

-0.1

0.80

ƽ Fully Avalanche Rated

0.1

0.60⁺_-

1 Gate

2 Drain

2.3

4.60

+0.15

-0.15

3 Source

4 Drain

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

Rating

100

1ꢀ

Unit

VDS

Gate-Source Voltage

=25ć

Continuous Drain Current, VGS @ 10V

=100ć

ķ Ļ

ꢀ0

Pulsed Drain Current

Power Dissipation

W/ć

TC=25ć

Linear Derating Factor

0.53

150

ĸ Ļ

Single Pulse Avalanche Energy

ķ Ļ

Avalanche Current

ķ Ļ

7.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ^Ĺ

dv/dt

V/ns

Thermal Resistance.Junction- to-Case

Thermal Resistance.Junction- to-Ambient (PCB mount) ^Ľ

RthJC

RthJA

1.9

ć/W

Thermal Resistance.Junction- to-Ambient

110

Soldering Temperature, for 10 seconds

Junction Temperature

300(1.ꢀmm from case)

175

Storage Temperature Range

Tstg

-55 to 175

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