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IRLR3303TRR PDF预览

IRLR3303TRR

更新时间: 2024-11-06 19:51:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 149K
描述
Power Field-Effect Transistor, 35A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D2PAK-3

IRLR3303TRR 数据手册

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PD- 91316F  
IRLR/U3303  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Ultra Low On-Resistance  
l Surface Mount (IRLR3303)  
l Straight Lead (IRLU3303)  
l Advanced Process Technology  
l Fast Switching  
D
VDSS = 30V  
RDS(on) = 0.031Ω  
G
ID = 35Aꢀ  
S
l Fully Avalanche Rated  
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve the lowest possible on-resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs are well known for,  
provides the designer with an extremely efficient device for use in a wide  
variety of applications.  
D-Pak  
T O -252AA  
I-Pak  
TO -251AA  
The D-PAK is designed for surface mounting using vapor phase, infrared, or  
wave soldering techniques. The straight lead version (IRFU series) is for  
through-hole mounting applications. Power dissipation levels up to 1.5 watts  
are possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
35 ꢀ  
25  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
140  
68  
PD @TC = 25°C  
PowerDissipation  
W
W/°C  
V
LinearDeratingFactor  
0.45  
± 16  
130  
20  
VGS  
EAS  
IAR  
Gate-to-SourceVoltage  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
mJ  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
OperatingJunctionand  
6.8  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
StorageTemperatureRange  
SolderingTemperature, for10seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
2.2  
50  
Units  
RθJC  
RθJA  
RθJA  
Case-to-Ambient(PCBmount)**  
Junction-to-Ambient  
–––  
°C/W  
–––  
110  
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
www.irf.com  
1
9/28/98  

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