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IRLR3705Z PDF预览

IRLR3705Z

更新时间: 2024-11-05 21:55:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 287K
描述
Specifically designed for Automotive applications,this HEXFET Power MOSFET

IRLR3705Z 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.65其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):110 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):42 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):360 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLR3705Z 数据手册

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PD - 96896  
AUTOMOTIVE MOSFET  
IRLR3705Z  
IRLU3705Z  
Features  
lLogic Level  
lAdvanced Process Technology  
lUltra Low On-Resistance  
l175°C Operating Temperature  
lFast Switching  
HEXFET® Power MOSFET  
D
VDSS = 55V  
lRepetitive Avalanche Allowed up to Tjmax  
RDS(on) = 8.0mΩ  
G
Description  
ID = 42A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
S
D-Pak  
I-Pak  
IRLU3705Z  
IRLR3705Z  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
89  
D
D
D
C
@ T = 100°C  
63  
42  
A
C
@ T = 25°C  
C
360  
130  
DM  
P
@T = 25°C Power Dissipation  
W
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.88  
± 16  
W/°C  
V
V
GS  
EAS (Thermally limited)  
110  
190  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
EAR  
mJ  
T
T
-55 to + 175  
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.14  
40  
Units  
Junction-to-Case  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
–––  
°C/W  
–––  
110  
HEXFET® isaregisteredtrademarkofInternationalRectifier.  
www.irf.com  
1
9/29/04  

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