Datasheet > IRLR3714TRL

IRLR3714TRL

更新时间： 2024-11-24 21:19:03

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
11页	113K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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中文翻译

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数据手册

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IRLR3714TRL 数据手册

PD - 94266

IRLR3714

SMPS MOSFET

IRLU3714

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

V_DSS

R_DS(on)max

I_D

Converters with Synchronous Rectification

for Telecom and Industrial Use

20V

20mΩ

36A

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR3714

I-Pak

IRLU3714

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

36 ꢀ

140

P_D@T_C= 25°C

P_D@T_C= 70°C

Maximum Power Dissipation

Linear Derating Factor

0.31

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Typ.

Max.

3.2

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient

Junction-to-Ambient (PCB mount)

–––

°C/W

110

Notes through ꢀare on page 10

www.irf.com

06/15/01

12 3 4 5 6 7...11

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