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IRLR3715ZCPBFTR

更新时间： 2024-11-27 13:08:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管脉冲
页数	文件大小	规格书
10页	124K
描述
Power Field-Effect Transistor, 49A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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数据手册

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IRLR3715ZCPBFTR 数据手册

PD - 94177

SMPS MOSFET

IRLR3715

IRLU3715

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

V_DSSR_DS(on)max

I_D

Converters with Synchronous Rectification

for Telecom and Industrial Use

20V

14mΩ

54A

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR3715

I-Pak

IRLU3715

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

± 20

210

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Maximum Power Dissipationꢀ

Linear Derating Factor

3.8

0.48

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Typ.

–––

Max.

2.1

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient

Junction-to-Ambient (PCB mount)ꢀ

110

°C/W

Notes through ꢀare on page 10

www.irf.com

06/28/01

12 3 4 5 6 7...10

中文翻译

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