Datasheet > IRLR3715ZCTRRPBF

IRLR3715ZCTRRPBF

更新时间： 2024-11-27 21:03:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	293K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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IRLR3715ZCTRRPBF 数据手册

PD - 96053

IRLR3715ZCPbF

IRLU3715ZCPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

V_DSSR_DS(on)max

7.2nC

11m

20V

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

I-Pak

IRLR3715ZCPbF IRLU3715ZCPbF

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

200

@T_C= 25°C

@T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

0.27

W/°C

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.75

Units

R_θ

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

Notes through ꢀ are on page 11

www.irf.com

02/23/06

12 3 4 5 6 7...11

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