IRLR4343PBF

更新时间： 2024-11-27 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管脉冲放大器
页数	文件大小	规格书
11页	303K
描述
DIGITAL AUDIO MOSFET

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中文翻译

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IRLR4343PBF 数据手册

PD - 95394A

IRLR4343PbF

DIGITAL AUDIO MOSFET

IRLU4343PbF

IRLU4343-701PbF

Features

l Advanced Process Technology

Key Parameters

l Key Parameters Optimized for Class-D Audio

Amplifier Applications

l Low R_DSONfor Improved Efficiency

l Low Q_gand Q_swfor Better THD and Improved

Efficiency

l Low Q_rrfor Better THD and Lower EMI

l 175°C Operating Junction Temperature for

Ruggedness

V_DS

R_DS(ON)typ. @ V_GS= 10V

R_DS(ON)typ. @ V_GS= 4.5V

Q_gtyp.

°C

T_Jmax

175

l Repetitive Avalanche Capability for Robustness and

Reliability

l Multiple Package Options

l Lead-Free

D-Pak

IRLR4343

I-Pak

IRLU4343

I-Pak Leadform 701

IRLU4343-701

Refer to page 10 for package outline

Description

This Digital Audio HEXFET^®is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

V_GS

±20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

P_D@T_C= 100°C

Power Dissipation

0.53

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

Storage Temperature Range

Clamping Pressure

T_STG

–––

Thermal Resistance

Parameter

Typ.

–––

Max.

1.9

Units

R_θJC

Junction-to-Case

R_θ

Junction-to-Ambient (PCB Mounted)

Junction-to-Ambient (free air)

°C/W

R_θJA

110

Notes through are on page 10

www.irf.com

12/8/04

12 3 4 5 6 7...11

中文翻译

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与IRLR4343PBF相关器件

型号	品牌	获取价格	描述	数据表
IRLR4343TR	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLR4343TRL	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLR4343TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLR4343TRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLR4343TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLR4343TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLR4343TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLR6225	INFINEON	获取价格	20V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装
IRLR6225PBF	INFINEON	获取价格	Battery Protection Switch
IRLR6225TRPbF	INFINEON	获取价格	Battery Protection Switch

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