Datasheet > IRLR3915TR

IRLR3915TR

更新时间： 2024-10-15 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	483K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:30A;Vgs(th)(V):±16;漏源导通电阻:14mΩ@10V

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IRLR3915TR 数据手册

IRLR3915

UMW

55V N-Channel MOSFET

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

=55V

I (at V =10V)=30A

DS(ON)

(at V =10V) < 14mΩ

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon limited)

Continuous Drain Current, V_GS@ 10V (See Fig.9)

Continuous Drain Current, V_GS@ 10V (Package limited)

Pulsed Drain Current

240

120

0.77

± 16

200

600

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(6 sigma)

I_AR

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.3

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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