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IRLR3802PBF PDF预览

IRLR3802PBF

更新时间: 2024-11-26 22:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 278K
描述
HEXFET Power MOSFET

IRLR3802PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, DPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:6.94
Base Number Matches:1

IRLR3802PBF 数据手册

 浏览型号IRLR3802PBF的Datasheet PDF文件第2页浏览型号IRLR3802PBF的Datasheet PDF文件第3页浏览型号IRLR3802PBF的Datasheet PDF文件第4页浏览型号IRLR3802PBF的Datasheet PDF文件第5页浏览型号IRLR3802PBF的Datasheet PDF文件第6页浏览型号IRLR3802PBF的Datasheet PDF文件第7页 
PD - 95089A  
IRLR3802PbF  
IRLU3802PbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency 3.3V and 5V input Point-  
of-Load Synchronous Buck Converters  
l Power Management for Netcom,  
Computing and Portable Applications.  
l Lead-Free  
VDSS  
12V  
RDS(on) max  
Qg  
27nC  
8.5mΩ  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRLR3802  
I-Pak  
IRLU3802  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
12  
V
VGS  
Gate-to-Source Voltage  
± 12  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current  
84 „  
60„  
A
320  
PD @TC = 25°C  
PD @TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
88  
44  
W
W
0.59  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.7  
Units  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
40  
°C/W  
110  
Notes  through „are on page 9  
www.irf.com  
1
12/7/04  

IRLR3802PBF 替代型号

型号 品牌 替代类型 描述 数据表
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