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IRLR3915TRLPBF PDF预览

IRLR3915TRLPBF

更新时间: 2024-01-28 09:25:19
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 322K
描述
Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

IRLR3915TRLPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-252AA
包装说明:LEAD FREE, PLASTIC, DPAK-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.14其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):120 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLR3915TRLPBF 数据手册

 浏览型号IRLR3915TRLPBF的Datasheet PDF文件第2页浏览型号IRLR3915TRLPBF的Datasheet PDF文件第3页浏览型号IRLR3915TRLPBF的Datasheet PDF文件第4页浏览型号IRLR3915TRLPBF的Datasheet PDF文件第5页浏览型号IRLR3915TRLPBF的Datasheet PDF文件第6页浏览型号IRLR3915TRLPBF的Datasheet PDF文件第7页 
PD - 95090B  
IRLR3915PbF  
IRLU3915PbF  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 55V  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
RDS(on) = 14mΩ  
G
Description  
ID = 30A  
S
ThisHEXFET®PowerMOSFETutilizesthelatest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this product are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating. These features  
combinetomakethisdesignanextremelyefficient  
and reliable device for use in a wide variety of  
applications.  
I-Pak  
D-Pak  
IRLU3915PbF  
IRLR3915PbF  
Absolute Maximum Ratings  
Parameter  
Max.  
61  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon limited)  
Continuous Drain Current, VGS @ 10V (See Fig.9)  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current   
43  
A
30  
240  
120  
0.77  
± 16  
200  
600  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
EAS  
Single Pulse Avalanche Energy‚  
Single Pulse Avalanche Energy Tested Value‡  
Avalanche Current  
mJ  
EAS (6 sigma)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
TJ  
Repetitive Avalanche Energy†  
Operating Junction and  
mJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
110  
Max.  
1.3  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)ˆ  
50  
°C/W  
Junction-to-Ambient–––  
HEXFET(R) is a registered trademark of International Rectifier.  
www.irf.com  
1
10/01/10  

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