Datasheet > IRLR3636

IRLR3636

更新时间： 2024-11-25 11:13:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	393K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRLR3636 数据手册

PD - 96224

IRLR3636PbF

IRLU3636PbF

HEXFET^®Power MOSFET

Applications

l DC Motor Drive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

60V

5.4m

6.8m

99A

Benefits

50A

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D-Pak

I-Pak

IRLU3636PbF

IRLR3636PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

396

143

0.95

±16

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

Operating Junction and

-55 to + 175

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

170

Avalanche Current

I_AR

See Fig.14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

Junction-to-Case

R_θJA

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

www.irf.com

02/06/09

12 3 4 5 6 7...11

中文翻译

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与IRLR3636相关器件

型号	品牌	获取价格	描述	数据表
IRLR3636PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLR3636TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
IRLR3636TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
IRLR3636TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
IRLR3705Z	INFINEON	获取价格	Specifically designed for Automotive applications,this HEXFET Power MOSFET
IRLR3705ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET HEXFET Power MOSFET
IRLR3705ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLR3705ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLR3705ZTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLR3705ZTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met

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