Datasheet > IRLR3410TR

IRLR3410TR

更新时间： 2024-10-15 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	440K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:17A;Vgs(th)(V):±16;漏源导通电阻:105mΩ@10V

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IRLR3410TR 数据手册

UMW

IRLR3410

Description

The D-PAK is designed for surface mounting

using vapor phase, infrared, or wave soldering

techniques.

Power dissipation levels up to 1.5 watts are pos-

sible in typical surface mount applications.

Features

V_DS(V) = 100V

I_D= 17A (V_GS= 10V)

R_DS(ON)=105mΩ (V_GS= 10V)

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢀ

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.53

± 16

150

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Currentꢀ

9.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energyꢀ

Peak Diode Recovery dv/dt

Operating Junction and

7.9

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.9

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

°C/W

110

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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