5秒后页面跳转
IRLR3410TR PDF预览

IRLR3410TR

更新时间: 2024-11-24 13:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 160K
描述
暂无描述

IRLR3410TR 数据手册

 浏览型号IRLR3410TR的Datasheet PDF文件第2页浏览型号IRLR3410TR的Datasheet PDF文件第3页浏览型号IRLR3410TR的Datasheet PDF文件第4页浏览型号IRLR3410TR的Datasheet PDF文件第5页浏览型号IRLR3410TR的Datasheet PDF文件第6页浏览型号IRLR3410TR的Datasheet PDF文件第7页 
PD - 91607B  
IRLR/U3410  
HEXFET® Power MOSFET  
l Logic Level Gate Drive  
l Ultra Low On-Resistance  
l Surface Mount (IRLR3410)  
l Straight Lead (IRLU3410)  
l Advanced Process Technology  
l Fast Switching  
D
VDSS = 100V  
RDS(on) = 0.105Ω  
G
ID = 17A  
l Fully Avalanche Rated  
Description  
S
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
D -PAK  
TO -252AA  
I-PAK  
TO -251AA  
The D-PAK is designed for surface mounting using  
vapor phase, infrared, or wave soldering techniques.  
The straight lead version (IRFU series) is for through-  
hole mounting applications. Power dissipation levels  
up to 1.5 watts are possible in typical surface mount  
applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current ꢀ  
17  
12  
A
60  
PD @TC = 25°C  
Power Dissipation  
79  
W
W/°C  
V
Linear Derating Factor  
0.53  
± 16  
150  
9.0  
7.9  
5.0  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Currentꢀ  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energyꢀ  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.9  
50  
Units  
°C/W  
1
RθJC  
RθJA  
Junction-to-Ambient (PCB mount) **  
Junction-to-Ambient  
RθJA  
110  
www.irf.com  
5/11/98  

与IRLR3410TR相关器件

型号 品牌 获取价格 描述 数据表
IRLR3410TRL INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
IRLR3410TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
IRLR3410TRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
IRLR3636 INFINEON

获取价格

The StrongIRFET™ power MOSFET family is optim
IRLR3636PBF INFINEON

获取价格

HEXFET Power MOSFET
IRLR3636TRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
IRLR3636TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
IRLR3636TRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
IRLR3705Z INFINEON

获取价格

Specifically designed for Automotive applications,this HEXFET Power MOSFET
IRLR3705ZPBF INFINEON

获取价格

AUTOMOTIVE MOSFET HEXFET Power MOSFET