Datasheet > IRLR3110Z

IRLR3110Z

更新时间： 2024-11-06 11:09:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	326K
描述
100V HEXFET Power MOSFET, 采用 D-Pak 封装

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中文翻译

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IRLR3110Z 数据手册

PD - 97175B

IRLR3110ZPbF

IRLU3110ZPbF

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

V_DSS= 100V

R_DS(on)= 14mΩ

Description

Specifically designed for Industrial applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

binetomakethisdesignanextremelyefficientand

reliable device for use in Industrial applications

and a wide variety of other applications.

D-Pak

I-Pak

IRLU3110ZPbF

IRLR3110ZPbF

Absolute Maximum Ratings

Parameter

Max.

Units

@ T = 25°C

(Silicon Limited)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

@ T = 25°C

250

140

@T = 25°C

Power Dissipation

Linear Derating Factor

0.95

±16

W/°C

Gate-to-Source Voltage

E_{AS (Thermally limited)}

110

140

Single Pulse Avalanche Energy

_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

°C

Storage Temperature Range

STG

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

110

HEXFET^®isaregisteredtrademarkofInternationalRectifier.

www.irf.com

11/30/09

12 3 4 5 6 7...12

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