IRLR3303

更新时间： 2024-11-23 22:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	140K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLR3303 数据手册

PD- 91316F

IRLR/U3303

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR3303)

l Straight Lead (IRLU3303)

l Advanced Process Technology

l Fast Switching

V_DSS= 30V

R_DS(on)= 0.031Ω

I_D= 35Aꢀ

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

D-Pak

T O -252AA

I-Pak

TO -251AA

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

35 ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

140

P_D@T_C= 25°C

PowerDissipation

W/°C

LinearDeratingFactor

0.45

± 16

130

V_GS

E_AS

I_AR

Gate-to-SourceVoltage

Single Pulse Avalanche Energy

AvalancheCurrent

E_AR

dv/dt

T_J

RepetitiveAvalancheEnergy

Peak Diode Recovery dv/dt

OperatingJunctionand

6.8

V/ns

5.0

-55 to + 175

T_STG

StorageTemperatureRange

SolderingTemperature, for10seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.2

Units

R_θJC

R_θJA

Case-to-Ambient(PCBmount)**

Junction-to-Ambient

–––

°C/W

–––

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

9/28/98

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRLR3303相关器件

型号	品牌	获取价格	描述	数据表
IRLR3303PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLR3303TR	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Met
IRLR3303TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Met
IRLR3303TRPBF	INFINEON	获取价格	暂无描述
IRLR3303TRR	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Met
IRLR3410	INFINEON	获取价格	HEXFET Power MOSFET
IRLR3410	KEXIN	获取价格	N-Channel MOSFET
IRLR3410PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLR3410TR	INFINEON	获取价格	暂无描述
IRLR3410TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C