Datasheet > IRLR3114Z

IRLR3114Z

更新时间： 2024-11-06 11:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	324K
描述
40V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

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中文翻译

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IRLR3114Z 数据手册

PD - 97284A

IRLR3114ZPbF

IRLU3114ZPbF

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Logic Level

V_DSS= 40V

_DS(on)= 4.9mΩ

Description

ThisHEXFET^®PowerMOSFETutilizesthelatest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescombine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

D-Pak

IRLR3114ZPbF

I-Pak

IRLU3114ZPbF

Absolute Maximum Ratings

Parameter

Max.

Units

@ T = 25°C

130

(Silicon Limited)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

@ T = 25°C

500

140

@T = 25°C

Power Dissipation

Linear Derating Factor

0.95

±16

W/°C

Gate-to-Source Voltage

E_{AS (Thermally limited)}

130

260

Single Pulse Avalanche Energy

_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

°C

Storage Temperature Range

STG

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

110

HEXFET^®isaregisteredtrademarkofInternationalRectifier.

www.irf.com

10/01/10

12 3 4 5 6 7...12

中文翻译

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