IRLR3103

更新时间： 2024-11-04 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	167K
描述
Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A)

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中文翻译

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数据手册
替代型号

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IRLR3103 数据手册

PD - 9.1333B

IRLR/U3103

PRELIMINARY

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR3103)

l Straight Lead (IRLU3103)

l Advanced Process Technology

l Fast Switching

V_DSS= 30V

R_DS(on)= 0.019Ω

l Fully Avalanche Rated

I_D= 46Aꢀ

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowestpossibleon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

device for use in a wide variety of applications.

D -PA K

I-PAK

T O -2 52 A A

TO -2 5 1 AA

The D-PAK is designed for surface mounting using vapor

phase, infrared, orwavesolderingtechniques. Thestraight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

46ꢀ

29ꢀ

220

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.56

±16

240

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.9

V/ns

2.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

Max.

1.8

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

8/7/96

12 3 4 5 6 7...10

中文翻译

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IRLR3103 替代型号

型号	品牌	替代类型	描述	数据表
IRLR3103TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103PBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET

与IRLR3103相关器件

型号	品牌	获取价格	描述	数据表
IRLR3103PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLR3103TR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRLR3103TRBDF	ETC	获取价格	IR 2004+
IRLR3103TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3105	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRLR3105PBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRLR3105TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Met

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