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IRLML6402GTRPBF PDF预览

IRLML6402GTRPBF

更新时间: 2024-10-30 12:58:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 84K
描述
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

IRLML6402GTRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, MICRO-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.02
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):11 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):3.7 A最大漏极电流 (ID):3.7 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.3 W
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLML6402GTRPBF 数据手册

 浏览型号IRLML6402GTRPBF的Datasheet PDF文件第2页浏览型号IRLML6402GTRPBF的Datasheet PDF文件第3页浏览型号IRLML6402GTRPBF的Datasheet PDF文件第4页浏览型号IRLML6402GTRPBF的Datasheet PDF文件第5页浏览型号IRLML6402GTRPBF的Datasheet PDF文件第6页浏览型号IRLML6402GTRPBF的Datasheet PDF文件第7页 
PD- 93755  
IRLML6402  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l SOT-23 Footprint  
l Low Profile (<1.1mm)  
l Available in Tape and Reel  
l Fast Switching  
D
VDSS = -20V  
G
RDS(on) = 0.065  
S
Description  
These P-Channel MOSFETs from International Rectifier utilize  
advanced processing techniques to achieve extremely low on-  
resistance per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that HEXFET  
power MOSFETs are well known for, provides the designer with  
an extremely efficient and reliable device for use in battery and  
load management.  
Micro3  
Athermallyenhancedlargepadleadframehasbeenincorporated  
into the standard SOT-23 package to produce a HEXFET Power  
MOSFET with the industry's smallest footprint. This package,  
dubbed the Micro3 , is ideal for applications where printed  
circuit board space is at a premium. The low profile (<1.1mm)  
of the Micro3 allows it to fit easily into extremely thin application  
environments such as portable electronics and PCMCIA cards.  
The thermal resistance and power dissipation are the best  
available.  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
-20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-3.7  
-2.2  
A
-22  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.3  
W
Power Dissipation  
0.8  
Linear Derating Factor  
0.01  
W/°C  
mJ  
V
EAS  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
11  
VGS  
± 12  
-55 to + 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
75  
100  
°C/W  
www.irf.com  
1
8/13/99  

IRLML6402GTRPBF 替代型号

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IRLML6402TRPBF INFINEON

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