5秒后页面跳转
IRLML6402GPBF PDF预览

IRLML6402GPBF

更新时间: 2024-10-30 11:10:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 180K
描述
HEXFET Power MOSFET

IRLML6402GPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, MICRO-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):11 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):3.7 A最大漏极电流 (ID):3.7 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.3 W最大脉冲漏极电流 (IDM):22 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLML6402GPBF 数据手册

 浏览型号IRLML6402GPBF的Datasheet PDF文件第2页浏览型号IRLML6402GPBF的Datasheet PDF文件第3页浏览型号IRLML6402GPBF的Datasheet PDF文件第4页浏览型号IRLML6402GPBF的Datasheet PDF文件第5页浏览型号IRLML6402GPBF的Datasheet PDF文件第6页浏览型号IRLML6402GPBF的Datasheet PDF文件第7页 
PD - 96161  
IRLML6402GPbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l SOT-23 Footprint  
l Low Profile (<1.1mm)  
l Available in Tape and Reel  
l Fast Switching  
D
VDSS = -20V  
G
RDS(on) = 0.065Ω  
l Lead-Free  
l Halogen-Free  
S
Description  
These P-Channel MOSFETs from International Rectifier utilize  
advanced processing techniques to achieve extremely low on-  
resistance per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that HEXFET®  
power MOSFETs are well known for, provides the designer with  
an extremely efficient and reliable device for use in battery and  
load management.  
Athermallyenhancedlargepadleadframehasbeenincorporated  
into the standard SOT-23 package to produce a HEXFET Power  
MOSFET with the industry's smallest footprint. This package,  
dubbed the Micro3, is ideal for applications where printed  
circuit board space is at a premium. The low profile (<1.1mm)  
of the Micro3 allows it to fit easily into extremely thin application  
environments such as portable electronics and PCMCIA cards.  
The thermal resistance and power dissipation are the best  
available.  
Micro3™  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-20  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-3.7  
-2.2  
A
-22  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.3  
W
Power Dissipation  
0.8  
Linear Derating Factor  
0.01  
W/°C  
mJ  
V
EAS  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
11  
VGS  
± 12  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
75  
100  
°C/W  
www.irf.com  
1
07/22/08  

IRLML6402GPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRLML6402PBF INFINEON

完全替代

HEXFET Power MOSFET

与IRLML6402GPBF相关器件

型号 品牌 获取价格 描述 数据表
IRLML6402GTRPBF INFINEON

获取价格

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Me
IRLML6402PBF TYSEMI

获取价格

Ultra Low On-Resistance P-Channel MOSFET Available in Tape and Reel
IRLML6402PBF INFINEON

获取价格

HEXFET Power MOSFET
IRLML6402PBF-1 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRLML6402PBF-1_15 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRLML6402TR INFINEON

获取价格

HEXFET Power MOSFET
IRLML6402TR UMW

获取价格

种类:P-Channel;漏源电压(Vdss):-20V;持续漏极电流(Id)(在25°C
IRLML6402TRPBF INFINEON

获取价格

Ultra Low On-Resistance
IRLML6402TRPBF TYSEMI

获取价格

HEXFET Power MOSFET
IRLML6402TRPBF-1 INFINEON

获取价格

Small Signal Field-Effect Transistor