Datasheet > IRLML6402PBF

IRLML6402PBF

更新时间： 2024-11-18 12:03:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
2页	219K
描述
Ultra Low On-Resistance P-Channel MOSFET Available in Tape and Reel

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLML6402PBF 数据手册

Product specification

IRLML6402PbF

HEXFET^®Power MOSFET

^lUltra Low On-Resistance

^lP-Channel MOSFET

^lSOT-23 Footprint

^lLow Profile (<1.1mm)

^lAvailable in Tape and Reel

^lFast Switching

V_DSS= -20V

R_DS(on)= 0.065Ω

^lLead-Free

^lHalogen-Free

Description

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET^®

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

Athermallyenhancedlargepadleadframehasbeenincorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3™, is ideal for applications where printed

circuit board space is at a premium. The low profile (<1.1mm)

of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

The thermal resistance and power dissipation are the best

available.

Micro3™

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-3.7

-2.2

-22

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

中文翻译

下载PDF

与IRLML6402PBF相关器件

型号	品牌	获取价格	描述	数据表
IRLML6402PBF-1	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML6402PBF-1_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML6402TR	INFINEON	获取价格	HEXFET Power MOSFET
IRLML6402TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C
IRLML6402TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRLML6402TRPBF	TYSEMI	获取价格	HEXFET Power MOSFET
IRLML6402TRPBF-1	INFINEON	获取价格	Small Signal Field-Effect Transistor
IRLML9301	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRLML9301PBF	INFINEON	获取价格	Compatible with existing Surface Mount Techniques
IRLML9301PBF_15	INFINEON	获取价格	Compatible with existing Surface Mount Techniques