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IRLML6401GTRPBF PDF预览

IRLML6401GTRPBF

更新时间: 2024-11-20 12:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 197K
描述
Ultra Low On-Resistance

IRLML6401GTRPBF 数据手册

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PD - 96160  
IRLML6401GPbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l SOT-23 Footprint  
l Low Profile (<1.1mm)  
l Available in Tape and Reel  
l Fast Switching  
VDSS = -12V  
RDS(on) = 0.05Ω  
l 1.8V Gate Rated  
l Lead-Free  
l Halogen-Free  
Description  
These P-Channel MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve extremely  
low on-resistance per silicon area. This benefit, combined  
with the fast switching speed and ruggedized device design  
that HEXFET® power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable device  
for use in battery and load management.  
Micro3™  
A thermally enhanced large pad leadframe has been  
incorporated into the standard SOT-23 package to produce  
a HEXFET Power MOSFET with the industry's smallest  
footprint. This package, dubbed the Micro3, is ideal for  
applications where printed circuit board space is at a  
premium. The low profile (<1.1mm) of the Micro3 allows it  
to fit easily into extremely thin application environments  
suchasportableelectronicsandPCMCIAcards.Thethermal  
resistance and power dissipation are the best available.  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
-12  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-4.3  
-3.4  
A
-34  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.3  
W
Power Dissipation  
0.8  
Linear Derating Factor  
0.01  
W/°C  
mJ  
V
EAS  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
33  
VGS  
± 8.0  
-55 to + 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
75  
100  
°C/W  
www.irf.com  
1
07/22/08  

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