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IRLML6401GTRPBF

更新时间： 2024-10-30 12:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	197K
描述
Ultra Low On-Resistance

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中文翻译

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数据手册
替代型号

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IRLML6401GTRPBF 数据手册

PD - 96160

IRLML6401GPbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= -12V

R_DS(on)= 0.05Ω

l 1.8V Gate Rated

l Lead-Free

l Halogen-Free

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device design

that HEXFET^®power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in battery and load management.

Micro3™

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint. This package, dubbed the Micro3™, is ideal for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

suchasportableelectronicsandPCMCIAcards.Thethermal

resistance and power dissipation are the best available.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-12

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-4.3

-3.4

-34

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 8.0

-55 to + 150

T_J,T_STG

Junction and Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

www.irf.com

07/22/08

12 3 4 5 6 7 8

中文翻译

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IRLML6401GTRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLML6401TR	INFINEON	类似代替	HEXFETPower MOSFET
IRLML6401PBF	INFINEON	功能相似	HEXFET Power MOSFET

与IRLML6401GTRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRLML6401PBF	TYSEMI	获取价格	Ultra Low On-Resistance P-Channel MOSFET Available in Tape and Reel
IRLML6401PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLML6401PBF_10	INFINEON	获取价格	Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint
IRLML6401PBF-1	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML6401PBF-1_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML6401TR	INFINEON	获取价格	HEXFETPower MOSFET
IRLML6401TR	UMW	获取价格	漏源电压（Vdss）:-12V;持续漏极电流（Id）（在25°C时）:-4.3A;栅极-源
IRLML6401TRPBF	TYSEMI	获取价格	HEXFET Power MOSFET
IRLML6401TRPBF-1	INFINEON	获取价格	Small Signal Field-Effect Transistor
IRLML6402	TI	获取价格	bq2026 Evaluation Software