Datasheet > IRLML6402

IRLML6402

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
浩畅 - HC		/
页数	文件大小	规格书
4页	1712K
描述
SOT-23

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中文翻译

获取价格

数据手册

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IRLML6402 数据手册

SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD.

SOT-23 Plastic-Encapsulate MOSFETS

P-Channel Enhancement MOSFET

IRLML6402

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

-0.1

0.4

■ Features

● Ultra low on-resistance.

● P-Channel MOSFET.

● SOT-23 Footprint.

● Low profile(＜1.1mm).

● Available in tape and reel.

● Fast switching.

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-20

Unit

Gate-Source Voltage

±12

-3.7

Continuous Drain Current VGS=4.5V @ T

=25℃

=70℃

-2.2

Continuous Drain Current VGS=4.5V@ T

Pulsed Drain Current

Power Dissipation

-30

1.3

@ TA=25℃

@ TA=70℃

0.8

Power Dissipation

Single Pulse Avalanche Energy

Thermal Resistance.Junction- to-Ambient

Linera Derating Factor

thJA

100

℃/W

W/℃

0.01

150

Junction Temperature

℃

Junction and Storage Temperature Range

stg

-55 to 150

Notes:

a.Repetitive Rating :Pulse width limited by maximum junction temperature

b.Starting T =25℃, L=1.65mH, R =25Ω, IAS=-3.7A

浩畅半导体

RevK：M ay2014

www.szhaochang.cn

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