Datasheet > IRLML6402

IRLML6402

更新时间： 2024-05-23 22:23:06

品牌	Logo	应用领域
友台半导体 - UMW		栅栅极
页数	文件大小	规格书
7页	3509K
描述
漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C时）:-3.7A;栅极-源极阈值电压:950mV @ 250uA;漏源导通电阻:65mΩ@4.5V;最大功耗（Ta = 25°C）:1.3W;种类:P-Channel;Vgs(th)(V):±12

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数据手册

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IRLML6402 数据手册

UMW

UMW IRLML6402

P-Channel Enhancement MOSFET

SOT–23

■ Features

● Ultra low on-resistance.

● P-Channel MOSFET.

● SOT-23 Footprint.

● Low profile(＜1.1mm).

● Available in tape and reel.

● Fast switching.

1. BASE

2. EMITTER

3. COLLECTOR

MARKING

1E MK

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-20

Unit

Gate-Source Voltage

±12

-3.7

Continuous Drain Current VGS=4.5V @ T

=25℃

=70℃

-2.2

Continuous Drain Current VGS=4.5V@ T

Pulsed Drain Current

Power Dissipation

-30

1.3

@ TA=25℃

@ TA=70℃

0.8

Power Dissipation

Single Pulse Avalanche Energy

Thermal Resistance.Junction- to-Ambient

Linera Derating Factor

thJA

100

℃/W

W/℃

0.01

150

Junction Temperature

℃

Junction and Storage Temperature Range

stg

-55 to 150

Notes:

a.Repetitive Rating :Pulse width limited by maximum junction temperature

b.Starting T =25℃, L=1.65mH, R =25Ω, IAS=-3.7A

www.umw-ic.com

友台半导体有限公司

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