Datasheet > IRLML6401PBF

IRLML6401PBF

更新时间： 2024-11-20 12:03:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
2页	236K
描述
Ultra Low On-Resistance P-Channel MOSFET Available in Tape and Reel

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IRLML6401PBF 数据手册

Product specification

IRLML6401PbF

HEXFET^®Power MOSFET

^lUltra Low On-Resistance

^lP-Channel MOSFET

^lSOT-23 Footprint

^lLow Profile (<1.1mm)

^lAvailable in Tape and Reel

^lFast Switching

V_DSS= -12V

R_DS(on)= 0.05Ω

^l1.8V Gate Rated

^lLead-Free

^lHalogen-Free

Description

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET^®

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce a

HEXFETPowerMOSFETwiththeindustry'ssmallestfootprint.

This package, dubbed the Micro3™, is ideal for applications

where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards. The thermal resistance and

power dissipation are the best available.

Micro3™

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-12

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-4.3

-3.4

-34

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 8.0

-55 to + 150

T_J,T_STG

Junction and Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

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