Datasheet > IRLML5103PBF_11

IRLML5103PBF_11

更新时间： 2024-10-30 12:46:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
8页	222K
描述
Lead-Free, Fast Switching, Available in Tape and Reel

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数据手册

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IRLML5103PBF_11 数据手册

PD - 94894A

IRLML5103PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= -30V

R_DS(on)= 0.60Ω

l Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

whereprintedcircuitboardspaceisatapremium. Thelow

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

Micro3™

Absolute Maximum Ratings

Parameter

Max.

-0.76

-0.61

-4.8

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

P_D@T_A= 25°C

Power Dissipation

540

mW/°C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 20

-5.0

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

T_J,T_STG

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

230

Units

°C/W

R_θJA

www.irf.com

12/14/11

12 3 4 5 6 7 8

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