Datasheet > IRLML6244

IRLML6244

更新时间： 2024-06-27 12:11:07

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	667K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLML6244 数据手册

IRLML6244

MOSFET (N-CHANNEL)

FEATURES

 VDS=20V, ID=6.3A, RDS(ON)<21mΩ@VGS=4.5V

 Fast switching

 Ultra Low On-Resistance

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

 Weight: 0.008 grams (approximate)



Marking:S8VHV

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

Value

Unit

Gate-source voltage

V_GS

±12

TA=25°C

6.3

Continuous drain current

I_D

TA=70°C

5.1

Pulsed drain current (Note 1)

IDM

TA=25°C

1.3

Power dissipation

TA=70°C

Linear Derating Factor

0.8

0.01

100

W/°C

°C/W

°C

Thermal resistance from Junction to ambient

Storage and Junction temperature

R_θJA*

TJ,TSTG

-55 ~+150

*Surface mounted on 1 in square Cu board

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V^(BR)DSS

Drain-Source breakdown voltage

VGS=0V, ID=250μA

150

±100

1.1

V_DS=16V,

=0V

=0V,

Zero gate voltage drain current

I_DSS

μA

Tj=125°C

Gate-body leakage current

Gate-threshold voltage (note 1)

I_GSS

V_GS(th)

nA V_DS=0V,

=±12V

0.5

0.9

VDS=VGS

=10μA

mΩ VGS

=4.5V, I

D=6.3A

mΩ VGS=2.5V, ID=5.1A

Drain-source on-resistance(note 1)

R_DS(ON)

Internal Gate Resistance

Forward transconductance(note 1)

Input capacitance

R_G

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

1.7

700

140

VDS

, ID=6.3A

=5V

V_{DS=16V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Turn-on delay time

4.9

7.5

VDD=10V,ID=1A,

RG=6.8Ω,VGS=4.5V

Turn-on rise time

Turn-off delay time

t_d(off)

Turn-off fall time

t_f

Q_g

Total gate charge

8.9

0.68

4.4

Q_gs

Q_gd

I_S

I_SM

V_SD

trr

VDS=10V,VGS=4.5V,ID=6.3A

Gate-source charge

Gate-drain charge

integral reverse

p-n junction diode

Diode forward current(Body Diode)

Pulsed Source Current(Body Diode)

Diode forward voltage (note 1)

Reverse Recovery Time

Reverse Recovery Charge

1.3

1.2

7.7

IS=6.3A, VGS=0V,Tj=25°C

TJ=25°C,VR=15V,IF=1.3A,

di/dt=100A/μs

5.1

Qrr

Note:1. Pulse test ; Pulse width ≤400µs, Duty cycle ≤ 2% .

1 / 6

E-mail:hkt@heketai.com

12 3 4 5 6

中文翻译

下载PDF

与IRLML6244相关器件

型号	品牌	获取价格	描述	数据表
IRLML6244PBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML6244PBF_15	INFINEON	获取价格	Industry-standard SOT-23 Package
IRLML6244TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时
IRLML6244TRPBF	TYSEMI	获取价格	RoHS compliant containing no lead, no bromide and no halogen Lower conduction losses
IRLML6244TRPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML6246	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRLML6246PBF	INFINEON	获取价格	Industry-standard SOT-23 Package
IRLML6246PBF_15	INFINEON	获取价格	Industry-standard SOT-23 Package
IRLML6246TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时
IRLML6246TRPBF	TYSEMI	获取价格	RoHS compliant containing no lead, no bromide and no halogen Multi-vendor compatibility

与IRLML6244相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

36
AIC1781A 电池充电控制器深度解析
2024-09-03

24
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

64
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

69

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLML6244

IRLML6244 数据手册

与IRLML6244相关器件

与IRLML6244相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLML6244

IRLML6244 数据手册

与IRLML6244相关器件

与IRLML6244相关文章

您还可以找

您在本页遇到什么问题？