IRLML5203

更新时间： 2024-11-19 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	137K
描述
Power MOSFET(Vdss=-30V)

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中文翻译

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数据手册
替代型号

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IRLML5203 数据手册

PD - 93967

PROVISIONAL

IRLML5203

HEXFET^®Power MOSFET

V_DSS

-30V

R_DS(on)max (mΩ)

98@V_GS= -10V

I_D

-3.0A

l Ultra Low On-Resistance

P-Channel MOSFET

l Surface Mount

165@V_GS= -4.5V

-2.6A

l Available in Tape & Reel

l Low Gate Charge

Description

TheseP-channelMOSFETsfromInternationalRectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This

benefitprovidesthedesignerwithanextremelyefficient

device for use in battery and load management

applications.

Micro3^TM

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to

produceaHEXFETPowerMOSFETwiththeindustry's

smallestfootprint.Thispackage,dubbedtheMicro3^TM

is ideal for applications where printed circuit board

space is at a premium. The low profile (<1.1mm) of

the Micro3 allows it to fit easily into extremely thin

applicationenvironmentssuchasportableelectronics

and PCMCIA cards. The thermal resistance and

power dissipation are the best available.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-30

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-3.0

-2.4

-24

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.25

0.80

Power Dissipation

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 20

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

100

Units

°C/W

R_θJA

www.irf.com

8/28/00

12 3 4 5 6 7...9

中文翻译

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IRLML5203 替代型号

型号	品牌	替代类型	描述	数据表
IRLML5203TRPBF	INFINEON	完全替代	HEXFETPower MOSFET

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IRLML5203GPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLML5203GTRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRLML5203PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRLML5203PBF	TYSEMI	获取价格	Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
IRLML5203TR	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Meta
IRLML5203TR	UMW	获取价格	漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-3A;栅极-源极阈
IRLML5203TRPBF	TYSEMI	获取价格	HEXFET Power MOSFET
IRLML5203TRPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML5203TRPBF-1	INFINEON	获取价格	Small Signal Field-Effect Transistor
IRLML6244	INFINEON	获取价格	HEXFETPower MOSFET