Datasheet > IRLML6302

IRLML6302

更新时间： 2024-11-19 18:09:31

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	955K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLML6302 数据手册

IRLML6302

P-Channel Power MOSFET

FEATURES



GenerationV Technology

Ultra Low On-Resistance

Low Profile (<1.1mm)



Fast Switching

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. ULflammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MARKING:1C7A

Absolute Maximum Ratings

(T_A= 25°C unless otherwise noted)

Parameter

Continuous Drain Current, V_GS@ -4.5V

Max.

-0.78

-0.62

-4.9

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Pulsed Drain Current

Power Dissipation

P_D@T_A= 25°C

540

mW/˚C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 12

dv/dt

-5.0

V/ns

°C

Peak Diode Recovery dv/dt

T_J,T_STG

R_JA

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

-55 to + 150

230

°C/W

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-20 ––– –––

––– -4.9 ––– mV/°C Reference to 25°C, I_D= -1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= -250µA

V_(BR)DSS/T_JBreakdown Voltage Temp. Coefficient

––– ––– 0.60

––– ––– 0.90

-0.70 ––– -1.5

0.56 ––– –––

––– ––– -1.0

––– ––– -25

––– ––– -100

––– ––– 100

––– 2.4 3.6

––– 0.56 0.84

––– 1.0 1.5

V_GS= -4.5V, I_D= -0.61A

V_GS= -2.7V, I_D= -0.31A

V_DS= V_GS, I_D= -250µA

V_DS= -10V, I_D= -0.31A

V_DS= -16V, V_GS= 0V

R_DS(ON)

Static Drain-to-Source On-Resistance



V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

V_DS= -16V, V_GS= 0V, T_J= 125°C

V_GS= -12V

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 12V

Q_g

I_D= -0.61A

Q_gs

Q_gd

t_d(on)

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= -16V

V_GS= -4.5V, See Fig. 6 and 9

––– 13

––– 18

–––

V_DD= -10V

I_D= -0.61A

t_r

t_d(off)

Turn-Off Delay Time

Fall Time

––– 22 –––

––– 97 –––

R_G= 6.2

t_f

R_D= 16 See Fig. 10

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

––– 53

–––

V_DS= -15V

Reverse Transfer Capacitance

––– 28 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

I_S

MOSFET symbol

––– ––– -0.54

showing the

integral reverse

Pulsed Source Current

(Body Diode)

I_SM

––– ––– -4.9

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

––– ––– -1.2

T_J= 25°C, I_S= -0.61A, V_GS= 0V

–––

T_J= 25°C, I_F= -0.61A

Q_rr

––– 26

nC di/dt = 100A/µs

Notes: Repetitive rating pulse width limited by max. junction temperature. ( See fig. 11 )

;

I_SD -0.61A, di/dt  76A/µs, V_DD V

Pulse width  300µs duty cycle  2%.

Surface mounted on FR-4 board, t  5sec.

^(BR)DSST_J 150°C

;

1 / 6

E-mail:hkt@heketai.com

12 3 4 5 6

中文翻译

下载PDF

与IRLML6302相关器件

型号	品牌	获取价格	描述	数据表
IRLML6302GPBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRLML6302GTRPBF	TYSEMI	获取价格	HEXFET Power MOSFET
IRLML6302PBF	TYSEMI	获取价格	Generation V Technology Ultra Low On-Resustance P-Channel MOSFET
IRLML6302PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLML6302PBF_07	INFINEON	获取价格	technology, Ultra Low On-Resistance, P-Channel MOSFET
IRLML6302PBF-1	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML6302PBF-1_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML6302TR	INFINEON	获取价格	generation v technology
IRLML6302TRPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRLML6344	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim

与IRLML6302相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLML6302

IRLML6302 数据手册

与IRLML6302相关器件

与IRLML6302相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLML6302

IRLML6302 数据手册

与IRLML6302相关器件

与IRLML6302相关文章

您还可以找

您在本页遇到什么问题？