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IRLML5203GTRPBF PDF预览

IRLML5203GTRPBF

更新时间: 2024-11-20 11:51:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
9页 195K
描述
Ultra Low On-Resistance

IRLML5203GTRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, MICRO-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.28
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:0.098 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.25 W
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLML5203GTRPBF 数据手册

 浏览型号IRLML5203GTRPBF的Datasheet PDF文件第2页浏览型号IRLML5203GTRPBF的Datasheet PDF文件第3页浏览型号IRLML5203GTRPBF的Datasheet PDF文件第4页浏览型号IRLML5203GTRPBF的Datasheet PDF文件第5页浏览型号IRLML5203GTRPBF的Datasheet PDF文件第6页浏览型号IRLML5203GTRPBF的Datasheet PDF文件第7页 
PD - 96166  
IRLML5203GPbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
P-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Low Gate Charge  
l Lead-Free  
VDSS  
-30V  
RDS(on) max (mW)  
98@VGS = -10V  
ID  
-3.0A  
l
165@VGS = -4.5V  
-2.6A  
l Halogen-Free  
Description  
TheseP-channelMOSFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve the  
extremely low on-resistance per silicon area. This  
benefitprovidesthedesignerwithanextremelyefficient  
device for use in battery and load management  
applications.  
Micro3TM  
A thermally enhanced large pad leadframe has been  
incorporated into the standard SOT-23 package to  
produceaHEXFETPowerMOSFETwiththeindustry's  
smallestfootprint.Thispackage,dubbedtheMicro3TM  
,
is ideal for applications where printed circuit board  
space is at a premium. The low profile (<1.1mm) of  
the Micro3 allows it to fit easily into extremely thin  
applicationenvironmentssuchasportableelectronics  
and PCMCIA cards. The thermal resistance and  
power dissipation are the best available.  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
-30  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-3.0  
-2.4  
A
-24  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.25  
W
Power Dissipation  
0.80  
Linear Derating Factor  
10  
mW/°C  
VGS  
Gate-to-Source Voltage  
± 20  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
100  
Units  
°C/W  
RθJA  
www.irf.com  
1
07/22/08  

IRLML5203GTRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRLML5203TRPBF INFINEON

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