Datasheet > IRLML6246TR

IRLML6246TR

更新时间： 2024-10-15 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	381K
描述
种类:N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:4.1A;Vgs(th)(V):±12;漏源导通电阻:mΩ@10V;漏源导通电阻:46mΩ@4.5V

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中文翻译

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数据手册

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IRLML6246TR 数据手册

UMW

IRLML6246

N-Channel MOSFET

Features

SOT–23

VDS (V) = 20V

RDS(ON)

46m (VGS = 4.5V)

66m (VGS = 2.5V)

Application(s)

Load/ System Switch

1. GATE

Benefits

2. SOURCE

3. DRAIN

Multi-vendor compatibility

Environmentally friendly

Increased Reliability

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

Drain-Source Voltage

V_DS

4.1

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.3

1.3

Maximum Power Dissipation

Linear Derating Factor

P_D@T_A= 25°C

P_D@T_A= 70°C

0.8

0.01

± 12

W/°C

Gate-to-Source Voltage

V_GS

-55 to + 150

Junction and Storage Temperature Range

°C

T_J,T_STG

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Ambient

R_θJA

100

°C/W

Junction-to-Ambient (t<10s)

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Surface mounted on 1 in square Cu board

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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